|
| |
Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate
|
|
| |
作者 |
Park, CH; Im, S; Yun, J; Lee, GH; Lee, BH; Sung, MM |
|
|
| |
选自 |
期刊 Applied Physics Letters; 卷期 2009年95-22; 页码 223506-223506 |
|
|
| |
关联知识点 |
|
|
|
| |
[摘要]：We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick in |
|
| |
|
|
|
被申请数（0） |
|
| |
[全文传递流程]：
一般上传文献全文的时限在1个工作日内
|
|
|