Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

[摘要]：The effects of Al2O3 gate insulator grown by atomic layer deposition (ALD) system on the two-dimensional electron gas (2DEG) transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated

[全文传递流程]：

一般上传文献全文的时限在1个工作日内