Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)

[摘要]：Metal insulator semiconductor structures were fabricated from n-Si(100) and n-Ge(100) wafers passivated with thin (4.5-5 nm) films of N-rich BCxNy (0.09 < x < 0.15, 0.38 < y < 0.52) and with atomic layer deposition HfO2 (10 nm) as the gate dielectric. C-V

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