Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(000(1)over-bar) - art. no. 061602

[摘要]：Deposition of manganese onto the gallium-rich, nitrogen-polar GaN(000 (1) over bar) surface results in the formation of quantum-height island structures. Two unique island heights differing by one atomic layer are observed, including 0.93 nm high islands

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