Etch stop in via-hole etching on aluminum interconnection using inductively coupled C2F6 plasma with O-2 additive gas

[摘要]：This article describes an etch stop in via-hole etching on an aluminum interconnection line using inductively coupled C2F6 plasma with O-2 additive gas under the following conditions: 2700 W source power, 5 mTorr operational pressure, and a total gas flow

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