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Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor

  作者 Chang, YH; Lu, YS; Hong, YL; Gwo, S; Yeh, JA  
  选自 期刊  IEEE Sensors Journal;  卷期  2011年11-5;  页码  1157-1161  
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[摘要]We demonstrated an ultrathin (similar to 10 nm) ifndium nitride (InN) ion-sensitive field-effect transistor (ISFET) for pH sensing. The native indium oxide formed on the InN surface functions as a chemical binding layer with a high pH sensitivity, while t

 
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