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MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

作者	Mizunuma, K; Ikeda, S; Park, JH; Yamamoto, H; Gan, H; Miura, K; Hasegawa, H; Hayakawa, J; Matsukura, F; Ohno, H

选自	期刊 Applied Physics Letters; 卷期 2009年95-23; 页码 232516-232516

关联知识点

[摘要]：The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack r
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