Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions

[摘要]：Fully epitaxial Co2MnSi (CMS)/MgO/CMS magnetic tunnel junctions (MTJs) with various values of Mn composition alpha in Co2Mn alpha Si electrodes were fabricated and the influence of alpha on the tunnel magnetoresistance (TMR) characteristics of these MTJs

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