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[摘要]：Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10(19)-10(20) cm(-3). Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 mu m. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702797] |
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