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[摘要]：This brief presents an improved logical-effort model to account for the slope mismatch between the input and output of a gate. The model has a simple formulation in which only one additional parameter is needed, making the analysis suitable for hand calculations. Using 65- and 90-nm complementary metal-oxide-semiconductor technologies, the model maintains less than 5% error in gate-delay estimations compared to Spectre simulations even under large variations between the input and output slopes. Using this model, a circuit optimization tool is written to optimize an adder synthesized with a 65-nm standard-cell library. The estimation error for the adder is also within the modeling accuracy of 5%, whereas the original logical-effort model and the synthesis timing libraries have errors of up to 40% and 20%, respectively. |
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