[摘要]：Hexagonal and pentagonal shapes of one-dimensional (1-D) nanostructures were observed at the growth of GaAs by molecular beam epitaxy method without catalyst aid. We report on the phase evolution dependence on the shapes of 1-D GaAs nanostructures. The hexagonal-shaped nanostructures showed a transition region composed of twin boundaries and stacking faults during the phase transition from a zinc-blende (ZB) structure to a wurtzite (WZ) structure. On the other hand, the pentagonal-shaped nanostructures appeared to have an abrupt transition from a ZB structure to a WZ structure and to be elongated along < 11 (2) over bar > directions of a ZB structure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698468]
