[摘要]：The authors demonstrate for the first time the injection of electrons across an n-type to p-type silicon junction and their subsequent tunneling from approximately 1 mu m tall p-type silicon points into a vacuum gap. The diffusive flow of these minority carriers in the p-type material is controlled by the application of a bias voltage in the form of a base contact metallization contact on the p-type silicon, in analogy with a bipolar junction transistor. Using an array density of 4x10(6) tips/cm(2), the authors measured a maximum average current of 1 nA per tip. Increasing the base contact bias voltage from 0 to similar to 1 V changes the emission from a supply limited regime typically observed with p-type silicon emitters, bringing the emitted current back to a linear Fowler-Nordheim characteristic similar to that observed previously by photon generation of carriers in p-type silicon tips. The authors finally note that in our short tips, minority carrier flow should be a nondissipative largely adiabatic diffusive transport process which is followed by extraction into vacuum. A novel heat extraction mechanism for future cooling applications is thus anticipated. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3490404]
