[摘要]：We study defect states in Pr3+-doped Lu2Si2O7 crystal by wavelength resolved thermally stimulated luminescence both below and above room temperature. We identify the TSL peaks, analyze them by the initial rise technique and calculate the characteristic parameters of the corresponding traps. The role of tunnelling of charge carriers between traps and recombination centers up to RT is observed and discussed. The TSL spectra show that the charge carrier recombination predominantly occurs at Pr3+ centers. We also provide some comparison with the LPS:Ce3+ crystal prepared by the same method. (C) 2011 Elsevier B.V. All rights reserved.
