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All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics

  作者 Zhao, Y; Di, CA; Gao, XK; Hu, YB; Guo, YL; Zhang, L; Liu, YQ; Wang, JZ; Hu, WP; Zhu, DB  
  选自 期刊  ADVANCED MATERIALS;  卷期  2011年23-21;  页码  2448-2448  
  关联知识点  
 

[摘要]Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm(2) V(-1) s(-1) are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air.

 
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