Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors - art. no. 032209

[摘要]：The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n(+) doped g

[全文传递流程]：

一般上传文献全文的时限在1个工作日内