Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode - art. no. 032203

[摘要]：The stress distributions in the InGaAs channel regions of strained InGaAs metal-oxide-semiconductor (MOS) field-effect transistors with high-k dielectric layer, metal gate, and InGaAs alloy souce/drain (S/D) stressors were studied with three-dimensional p

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