Characterization of Single-Photon Avalanche Diodes in a 0.5 mu m Standard CMOS Process-Part 1: Perimeter Breakdown Suppression

[摘要]：We report on the breakdown characteristics of a single-photon avalanche diode structure fabricated in a 0.5 mu m single-well CMOS process. This paper features two mechanisms for reducing perimeter breakdown. The first mechanism consists of using the later

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