Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

[摘要]：We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the < 110 > direction while f

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