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40 Gb/s surface-illuminated Ge-on-Si photodetectors

  作者 Osmond, J; Vivien, L; Fedeli, JM; Marris-Morini, D; Crozat, P; Damlencourt, JF; Cassan, E; Lecunff, Y  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-15;  页码  151116-151116  
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[摘要]This paper reports on surface illuminated Ge photodetectors monolithically integrated on Si substrate operating in the C and L wavelength bands. The responsivity at a wavelength of 1.5 mu m ranges from 0.08 to 0.21 A/W without bias voltage for Ge mesa dia

 
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