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[摘要]：In the work, modeling and design of a capacitive microwave power sensor employing the MEMS plate with clamped-clamped and free-free edges are presented. A novel analytical model of the sensor is established in detail. Through the function of mode shapes presented, the natural frequency can be solved by the Rayleigh-Ritz method. And based on the generalized coordinate introduced, the displacement of the plate with the irradiation of microwave power can be solved. Furthermore, the sensitivity for the power is also derived. Then the detailed consideration of the design and simulation of the microwave characteristic of the sensor are also presented. The linearly graded ground planar in the coplanar waveguide is employed to avoid step discontinuity. The fabrication process is compatible with GaAs MMIC technology completely, also described in detail. The measurement of the proposed sensor indicates a sensitivity of 7.2 fF W-1 and superior return and insertion losses (S-11 and S-21), less than -22.16 dB and -0.25 dB, respectively, up to 12 GHz, suggesting that it can be available for microwave power detecting in the X-band frequency range. |
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