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A Leakage-Compensated PLL in 65-nm CMOS Technology

  作者 Hung, CC; Liu, SI  
  选自 期刊  IEEE Transactions on Circuits and Systems II;  卷期  2009年56-7;  页码  525-529  
  关联知识点  
 

[摘要]A leakage compensation technique is presented to compensate the on-chip loop filter leakage for phase-locked loops in 65-nm complementary metal-oxide-semiconductor technology. Using the leakage compensation technique, the measured root-mean-square jitter is reduced to 3.10 ps when the output frequency is 950 MHz. This chip consumes 10 mW, and the active area is 0.14 mm(2).

 
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