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Efficiency limiting processes in 1.55 mu m InAs/InP-based quantum dots lasers

  作者 Sayid, SA; Marko, IP; Sweeney, SJ; Barrios, P; Poole, PJ  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-16;  页码  161104-161104  
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[摘要]The threshold current density, J(th), and its radiative component, J(rad), in 1.55 mu m InAs/InP (100) quantum dot lasers are measured as a function of temperature and hydrostatic pressure. We find that J(rad) is relatively temperature insensitive. However, J(th) increases significantly with temperature leading to a characteristic temperature T-0=72 K over the range 220-290 K. Nonradiative recombination accounts for up to 94% of J(th) at T=293 K. J(th) decreases with increasing pressure by 35% over 8 kbar causing an increase in T-0 from 72 to 88 K. The results indicate that nonradiative Auger recombination determines temperature behavior of these devices and T-0 value. (C) 2010 American Institute of Physics. [doi:10.1063/1.3504253]

 
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