[摘要]：Junctionless transparent electric-double-layer thin-film transistors with an in-plane-gate figure are fabricated on glass substrates at room temperature. The unique feature of such junctionless transistors is that the channel and source/drain electrodes are the same thin indium-tin-oxide film without any source/drain junction. Effective field-effect modulation of drain current can be obtained when the indium-tin-oxide thickness is reduced to 20nm. Such junctionless transparent thin-film transistors exhibit a good electrical performance with a small subthreshold swing (< 0.2V/decade), a high mobility(similar to 20 cm(2)/Vs), and a large on/off ratio (> 10(6)), respectively. A serial-capacitor model is proposed to understand the operation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3659478]
