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Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As

作者	Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J

选自	期刊 Journal Of Vacuum Science & Technology B; 卷期 2010年28-3; 页码 648-648

关联知识点

[摘要]：The metal-oxide-semiconductor (MOS) capacitors of Al2O3/Ga2O3(Gd2O3) on n- and p-type In0.2Ga0.8As with different metal gates exhibited excellent capacitance-voltage (C-V) characteristics and remarkable thermodynamic stability after rapid thermal annealin
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