Polythiophene-based charge dissipation layer for electron beam lithography of zinc oxide and gallium nitride

[摘要]：The ability of thin polythiophene layers to dissipate accumulated charge in the electron beam lithography (EBL) of wide bandgap semiconductors, such as zinc oxide and gallium nitride, is demonstrated. A quick and inexpensive processing method is demonstra

[全文传递流程]：

一般上传文献全文的时限在1个工作日内