Spin-polarized tunneling in fully epitaxial magnetic tunnel diodes with a narrow-gap In1-XMnXAs electrode

[摘要]：We investigated spin-dependent tunneling properties in fully epitaxial Fe/ZnSe/In1-xMnxAs with a metal/insulator/semiconductor structure. A tunneling magnetoresistance (TMR) ratio up to 14% was observed, which is the first TMR reported in tunnel junctions

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