【文章名】Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
作者
Park, HB; Park, CS; Kang, CY; Song, SC; Lee, BH; Jang, TY; Kim, TW; Jeong, JK; Choi, R
[摘要]：Effects of Gd capping of HfSiON gate dielectric oil the characteristics of n metal-oxide-semiconductor field effect transistor (nMOSFET) with TaC gate electrode were investigated. MOSFETs with an in situ deposited Gd/TaC bilayer demonstrated a reduced equ
