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Memory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix

  作者 Zhou, SQ; Shalimov, A; Potzger, K; Jeutter, NM; Baehtz, C; Helm, M; Fassbender, J; Schmidt, H  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-19;  页码  192505-192505  
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[摘要]Crystalline Mn5Ge3 nanomagnets are formed inside Mn-diluted Ge matrix using Mn ion implantation A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corrob

 
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