Type-II InP-based lasers emitting at 2.55 mu m - art. no. 041109

[摘要]：Room-temperature lasing at 2.55 mu m is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 degrees C. This record long-wavelength lasing has become feasible by implementing compressive strain in both materials and a c

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