Effective energy gap of the double-walled carbon nanotubes with field effect transistors ambipolar characteristics - art. no. 043107

[摘要]：We have investigated the transport property of the double-walled carbon nanotubes (DWCNT)-field effect transistor (FET) devices with HfO2 insulating layers at room temperature and 4.2 K. These devices show the ambipolar FET characteristics after depositio

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