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Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits (vol 22, pg 5332, 2010)

  作者 Frenzel, H; Lajn, A; von Wenckstern, H; Lorenz, M; Schein, F; Zhang, ZP; Grundmann, M  
  选自 期刊  ADVANCED MATERIALS;  卷期  2011年23-12;  页码  1424-1424  
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