High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes

[摘要]：Spontaneous emission property of an asymmetrically graded 480 nm InGaN/GaN quantum well (QW) is investigated via k center dot p theory. Comparing to rectangular QW, band profiles of the graded QW change into parabolalike due to the variation of internal p

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