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[摘要]：Indium nanowires were synthesized by the oblique angle deposition technique, using an e-beam evaporator. The shape of the deposited nanowires changes with the vapor flux angle, and the x-ray diffraction spectrum shows scattering from tetragonal phase indium. Deposition rates ranging from 0.5 to 5 A degrees/s were used for 200 and 500 nm thick deposits. Nanowires formed at the highest deposition rate and were up to 4.5 mu m in length. Raman scattering shows enhanced intensity and optical absorption occurs in the infrared region. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3630050] |
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