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dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

作者	Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, SSH

选自	期刊 Journal Of Vacuum Science & Technology B; 卷期 2010年28-3; 页码 648-648

关联知识点

[摘要]：dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al2O3/Ga2O3(Gd2O3) (GGO) high kappa dielectrics and TiN metal gates are re
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