Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode - art. no. 241106

[摘要]：We have demonstrated laser operation of an AlGaN multiple-quantum-well (MQW) laser diode (LD) with a peak wavelength of 336.0 nm under pulsed current mode at room temperature. The LD was fabricated on a low-dislocation-density Al0.3Ga0.7N grown on a sapph

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