Applied Physics Letters ——个性化文献订阅—

个性化文献订阅>期刊> Applied Physics Letters


Single photon emission from InGaN/GaN quantum dots up to 50 K - art. no. 061115

作者	Kremling, S; Tessarek, C; Dartsch, H; Figge, S; Hofling, S; Worschech, L; Kruse, C; Hommel, D; Forchel, A

选自	期刊 Applied Physics Letters; 卷期 2012年100-6; 页码 61115-61115

关联知识点

[摘要]：We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (mu PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emi
		被申请数（0）
[全文传递流程]：一般上传文献全文的时限在1个工作日内