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Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

  作者 Lee, S; Kim, H; Yun, DJ; Rhee, SW; Yong, K  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-26;  页码  262113-262113  
  关联知识点  
 

[摘要]This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film o

 
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