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Air-stable n-channel single-crystal transistors with negligible threshold gate voltage - art. no. 053305

  作者 Yamagishi, M; Tominari, Y; Uemura, T; Takeya, J  
  选自 期刊  Applied Physics Letters;  卷期  2009年94-5;  页码  53305-53305  
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[摘要]Single-crystal transistors of highly electron-affine organic compounds were constructed on solid dielectrics to study intrinsic constraints for the n-channel field effect in ambient atmosphere. Tetracyanoquinodimethane field-effect devices reproducibly operate with a high mobility of 0.2-0.5 cm(2)/V s in the air. The threshold gate voltage is negligible unlike most other air-stable n-type organic transistors reported, including polycrystal film devices of the same compound. Together with the other example of less electron-affine semiconductor crystal showing air-stable field effect but with notable threshold voltage, the result suggests that crucial in air-stable n-channel field effect is sufficient electron-affinity of the organic semiconductors.

 
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