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Direct lithographic top contacts for pentacene organic thin-film transistors - art. no. 053304

  作者 Kuo, CC; Jackson, TN  
  选自 期刊  Applied Physics Letters;  卷期  2009年94-5;  页码  53304-53304  
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[摘要]We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 mu m. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm(2)/V-s. Contact resistance extracted from these OTFTs is about (5x10(7))-(5x10(8)) Omega mu m which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method's value for fabricating organic electronics.

 
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