[摘要]:We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 mu m. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm(2)/V-s. Contact resistance extracted from these OTFTs is about (5x10(7))-(5x10(8)) Omega mu m which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method's value for fabricating organic electronics. |