【文章名】Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy - art. no. 082105
Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy - art. no. 082105
作者
Yoshikawa, M; Ogawa, S; Inoue, K; Seki, H; Tanahashi, Y; Sako, H; Nanen, Y; Kato, M; Kimoto, T
[摘要]：We measured cathodoluminescence (CL) spectra of SiO2 films grown on 4H-SiC wafers and found that for an acceleration voltage of 5 kV, CL peaks at 460 and 490 nm, assigned to oxygen vacancy centers (OVCs), become weak by post-oxidation annealing in N2O amb
