Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

[摘要]：Optical emission resulting from 405 nm selective photoexcitation of carriers in the GaInN/GaN quantum well (QW) active region of a light-emitting diode reveals two recombination channels. The first recombination channel is the recombination of photoexcite

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