[摘要]：Bi(2)Te(3) nanowires exhibit the phase-change memory switching behavior. The as-grown nanowire has a linear current-voltage curve and a crystalline structure. After switching to the high-resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline-amorphous phase change in Bi(2)Te(3) nanowires can be induced by a voltage pulse.
