Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/delta-Si:C/Si(100) substrates

[摘要]：In this letter we present a method to increase the efficiency of SiGe layer relaxation by He+ ion implantation and annealing. Preferential nucleation of He platelets along a delta-impurity layer grown in the Si substrate below the SiGe layer results in pl

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