Use of AlGaN in the notch region of GaN Gunn diodes

[摘要]：The wurtzite gallium nitride (GaN) Gunn diodes with aluminum gallium nitride (AlGaN) as launcher in the notch region are investigated by negative-differential-mobility model based simulation. Under the operation of self-excitation oscillation with dipole

[全文传递流程]：

一般上传文献全文的时限在1个工作日内