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Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica

  作者 Shieh, JM; Huang, JY; Yu, WC; Huang, JD; Wang, YC; Chen, CW; Wang, CK; Huang, WH; Cho, AT; Kuo, HC; Dai, BT; Yang, FL; Pan, CL  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-14;  页码  143501-143501  
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[摘要]We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica

 
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