Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5 - art. no. 241908

[摘要]：Nitrogen doping is identified to be a sufficient way to reduce the power consumption of Ge2Sb2Te5, a phase-change material for data storage. On the basis of ab initio molecular dynamics simulations, we show that the doped N in amorphous Ge2Sb2Te5 coexist

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