Study of slow oxide trap creating random telegraph noise within a gate edge overlap region in inversion mode - art. no. 232904

[摘要]：We investigated a slow oxide trap causing a random telegraph noise (RTN) within a gate edge overlap region in an inversion mode at metal/high-k dielectric nMOSFETs. The oxide trap was observed to generate RTN only in gate leakage current (I-g RTN) without in drain current (I-d RTN) in the inversion mode. Through the analysis of the RTN dependence on drain, source, and body bias, we found that the oxide trap in the dielectric exists not within the channel area but within the gate edge overlap region, resulting in the absence of Id RTN. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665628]

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