[摘要]:The dependence of device characteristics on cavity length is used to determine the injection efficiency, internal loss, and material gain of electrically injected AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Estimates for the transparency carrier density are discussed in the context of recombination coefficients that have been reported for c-plane InGaN-based light-emitting devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3657149]