[摘要]：We present the method of site-controlled growth of InAs quantum dots on InP(001) by solid-source molecular beam epitaxy. InAs dots are positioned using nanopatterns realized by electron beam lithography and dry etching. We have obtained the localized InAs dots for InAs deposit thickness inferior to the critical thickness for the two-dimensional/three-dimensional growth mode transition measured on a flat InP surface, implying that the dots can be actively positioned at predefined nucleation sites. Photoluminescence results show the emission of localized InAs dots on patterns overgrown with a thin InP buffer layer, at a wavelength around 1.5 mu m at room temperature.
