[摘要]：We have investigated the crystal plane alignment at m-plane GaN/ZnO heterointerfaces prepared by a room temperature epitaxial growth technique. Coaxial impact-collision ion scattering spectroscopy was used to show that the +c directions for GaN and ZnO are aligned at the GaN/ZnO (1 (1) over bar 00) hetero interface, which makes a striking contrast to polar c-plane GaN (0001)/ZnO (000 (1) over bar) interfaces, where polarity-flipping always occurs. Theoretical calculations revealed that an atomic alignment at the m-plane GaN/ZnO interface that maintains the +c direction across the interface is energetically favorable, although there could be an in-plane shift in the positions of the anions and cations at the interface. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3659008]
